基于MBE的GaAlAs／GaAs分布反馈式半导体激光器的制作新工艺  

A Novel Fabrication Technique for GaAlAs/GaAs Distributed Feedback Lasers Based on Molecular Beam Epitaxy

作　　者：罗毅[1] 张盛忠[1] 司伟民[1] 陈镝 王健华[1] 

机构地区：[1]清华大学电子工程系集成光电子学国家重点实验室

出　　处：《Journal of Semiconductors》1994年第10期694-699,共6页半导体学报（英文版）

基　　金：国家自然科学基金;优秀中青年人才专项基金

摘　　要：利用分子束外延（ＭＢＥ）对ＧａＡＩＡｓ和ＧａＡｓ的选择性热蚀特性进行光栅上的二次外延生长，既能获得清洁的外延界面，又能精确控制光栅的形状．采用这种方法，我们在国际上首次成功地制作了完全ＭＢＥ生长的内含吸收光栅的ＧａＡｌＡｓ／ＧａＡｓ多量子阱增益耦合型分布反馈式（ＤＦＢ）半导体激光器．并实现了激光器在室温下的脉冲激射，、器件表现出了ＤＦＢ模式的单模工作特性．Abstract Molecular Beam Epitaxy(MBE) regrowth on corrugated surface is improved dramatically using a novel technique by which not only a,clean surface can be obtained but also the shape of grating can be precisely controlled. A GaAIAs/GaAs multiqua.ntum well gain-coupled distributed feedback(DFB) laser with an absorptive grating is grown all by MBE for the first time. DFB mode oxcillation within a temperature range from of to 80℃ is achieved. Stable single longitudinal mode oscillation is maintained up to 20 mW.

关 键 词：半导体激光器 分子束外延 砷化镓 砷化铝镓 

分 类 号：TN248.405[电子电信—物理电子学]