低温SDB技术研究及硅表面吸附态的影响  

Study on Low Temperature SDB Influence of Surface Adsorbed States

作　　者：焦继伟[1] 陆德仁[1] 王渭源[1] 

机构地区：[1]中国科学院上海冶金研究所,传感技术国家重点实验室

出　　处：《Journal of Semiconductors》1994年第11期795-798,共4页半导体学报（英文版）

基　　金：机械电子工业部"八五"攻关计划资助;中国科学院重大课题;国家自然科学基金

摘　　要：研究了低温（５００℃以下）硅一硅直接键合（ＳＤＢ）技术，在低至１２０℃条件下获得了优良的键合结果，其键合强度可达到１０ＭＰａ以上．结合现有ＳＩＭＳ和ＴＤＳ测试结果，研究了硅表面吸附态对ＳＤＢ的影响，并对低温ＳＤＢ的可能机制进行了讨论．Abstract The SDB technology at temperature low to 120℃ has been developed. Tensile strength measurements, crude dieing tests and SEM observations have been undertaken to evaluate the bonding quality. The tensile strength is higher than 11MPa up to 15MPa. Based on the results of SIMS and TDS, a possible mechanism has been put forward to explain the phenomenon of low temperature SDB. Silicon surface wateradsorbed states which include St-OH(and/or H2O) and Si-H groups have important influence on the low temperature SDB.

关 键 词：SDB 低温 硅表面吸附态 半导体器件 

分 类 号：TN305.2[电子电信—物理电子学]