聚甲基丙烯酸甲酯LB膜用作高分辨率电子束抗蚀层的研究  

POLYMETHYLMETHACRYLATE LANGMUIR BLODGETT FILMS FOR HIGH RESOLUTION ELECTRON BEAM RESIST

作　　者：鲁武 顾宁[1] 韦钰[1] 沈浩瀛[2] 张岚[2] 

机构地区：[1]东南大学,南京210018 [2]南京电子器件研究所,南京210016

出　　处：《电子科学学刊》1994年第6期651-654,共4页

摘　　要：应用LB技术制备了厚度为20—100nm的聚甲基丙烯酸甲酯(PMMA)超薄高分辨率电子束抗蚀层。应用改装的日立S-450扫描电子显微镜(SEM),研究了PMMALB膜的曝光特性和刻蚀条件。结果得到线宽0.15μm的铝掩模光栅图形,表明此种超薄膜具有良好的分辨率和足够的抗蚀性。Ultra-thin (20-100nm) polymethylmethacrylate (PMMA) films prepared by Langmuir-Blodgett techniques have been explored as high resolution electron beam resists. A Hitachi S-450 scanning electron microscope (SEM) has been refitted for a high resolution electron beam exposure system. The lithographic properties and exposure conditions of LB PMMA films were investigated. 0.15um lines-and-spaces patterns were achieved by using the SEM as the exposure tool. The results demonstrate that the etch resistance of such films is sufficiently good to allow patterning of a 20-nm aluminum film suitable for mask fabrication.

关 键 词：LB膜 电子束刻蚀 抗蚀剂 PMMA 电子器件 

分 类 号：TN405.98[电子电信—微电子学与固体电子学]