1.56MeV Sb^＋注入单晶硅的反常退火行为  

Unusual annealing behavior of 1.56 MeV Sb￣+ ion implanted single-crystal silicon

作　　者：高剑侠[1] 朱德彰[1] 曹德新[1] 周祖尧[1] 赵国庆[1] 

机构地区：[1]中国科学院新疆物理研究所,中国科学院上海原子核研究所,中国科学院上海冶金研究所,上海复旦大学

出　　处：《核技术》1994年第1期1-6,共6页Nuclear Techniques

基　　金：中国科学院上海冶金研究所离子束开放实验室资助

摘　　要：剂量为２×１０（１３）－５×１０（１５）ｃｍ（－２）的１．５６ＭｅＶＳｂ＋注入Ｓｉ（１００）后，向石英炉中通入流动纯Ａｒ气进行热退火（退火温度为５００一１０５０℃，时间为３０ｍｉｎ）。采用３ＭｅＶＨｅ（２＋）卢瑟福背散射／沟道技术和透射电镜技术测量样品的注人损伤以及退火特性，结合计算机模拟数据，结果表明：缺陷的产生类型与注入离子的剂量、样品退火温度密切相关。The damage and annealing behavior of 1.56 MeV Sb+ ion implanted Si(100) have been studied. The dose range of implantation was 2 × 1013-5 × 1015 Sb+/cm2. The samples were annealed for 30 minutes in flowing Ar gas at temperatures ranging from 500 to 1050 ℃ in a conventional furnace tube. The implantation-induced damage and annealing quality of the samples were measured with 3 MeV He+ RBS/channeling and TEM techniques. In addition, a computer simulation of ion implantation damage has been performed with TRIM program. It is concluded that the category of defects is related to ion dose and annealing temperature of samples.

关 键 词：退火 缺陷 再结晶 离子注入 单晶硅 

分 类 号：TN305.3[电子电信—物理电子学]