非量子限条件下p型InSb MOS结构反型层中子能带实验研究  

EXPERIMENTAL STUDY OF SUBBAND STRUCTURE IN THE INVERSION LAYER OF p-TYPE InSb MOS DEVICE IN THE NON-QUANTUM LIMIT CONDITION

作　　者：刘坤[1] 褚君浩[1] 欧海疆 汤定元[1] 

机构地区：[1]中国科学院上海技术物理研究所

出　　处：《红外与毫米波学报》1994年第5期369-375,共7页Journal of Infrared and Millimeter Waves

摘　　要：在100K条件下测量了p型InSb MOS器件的变频电容-电压(C-V)谱,在反型区观察到第二子带填充电子的台阶效应,还发现一个位于导带中的共振缺陷态.采用非量子限多带C-V拟合模型获得了子能带结构.The capacitance-voltage (C-V) characteristic of InSb metal-oxide-semiconductor (MOS) device was measured at 100 K. In the inversion region, the second capacitance plateau was observed for the first time, which can be attributed to the electron filling in the second subband. At the same time, a resonant defect state was found for the first time. By using the previously presented C - V model in the non-quantum limit condition, the subband structure in the inversion layer has been obtained.

关 键 词：电容谱 共振缺陷态 子能带 锑化铟 

分 类 号：O471.1[理学—半导体物理] O471.5[理学—物理]