单片集成透镜高速1×4InGaAs/InPpin探测器阵列研究  

HIGH-SPEED 1×4 InGaAs/InP pin PHOTODIODE ARRAY WITH MONOLITHICALLY INTEGRATED LENS

作　　者：肖德元 任琮欣[1] 陈学良[1] 

机构地区：[1]中国科学院上海冶金研究所微电子学分部,上海200233

出　　处：《红外与毫米波学报》1994年第5期364-368,共5页Journal of Infrared and Millimeter Waves

基　　金：中国科学院上海冶金研究所青年科学基金资助项目

摘　　要：设计并制作了带有集成透镜的1×4 InGaAs/InP pin探测器阵列.对器件纵向和横向结构参数及集成InP透镜几何参数进行了模拟设计与优化.器件带宽达1.0GHz,对宽带波分复用、光互连以及光计算网络有重要应用价值.High-speed 1×4 InGaAs/InP pin photodiode arrays with integrated lenses were fabricated. The device parameters and InP microlenses were designed and optimized. The device performance of bandwidth of 1.0 GHz makes it well suited to broad-bandwidth wavelength division multiplexing, optical interconnection and optical computation.

关 键 词：探测器阵列 集成透镜 磷化铟 INGAAS 

分 类 号：TN215[电子电信—物理电子学] O435.2[机械工程—光学工程]