Si衬底上Co薄膜氧化观察  

OBSERVATION OF Co FILM OXIDATION ON Si SUBSTRATE

作　　者：张灶利[1] 肖治纲[1] 杜国维[1] 

机构地区：[1]北京科技大学

出　　处：《金属学报》1994年第6期B270-B272,共3页Acta Metallurgica Sinica

摘　　要：用透射电子显微镜和Ｘ射线衍射方法研究Ｓｉ衬底上的Ｃｏ薄膜氧化．发现：在５５０℃以下，薄膜氧化产物是ＣｏＯ；在９００℃再次进行真空热处理，ＣｏＯ能转变为硅化物．薄膜氧化，对Ｃｏ／Ｓｉ界面硅化物转变有影响．The oxidation of Co film on Si substrate during heat treatment was studied by TEM and XRD. The oxidized product of the film, annealed below 550℃, was found to be CoO, and to change into a silicide after further heating under vacuum at 900℃. The oxidation of the film has an important effect on the Co/Si interface reaction.

关 键 词：薄膜 Co-Si化合物 氧化 

分 类 号：TN304.055[电子电信—物理电子学]