合成GaN粗晶体棒的研究  

Research on the Synthesis of Thick GaN Crystalline Stick

作　　者：董志华[1] 薛成山[1] 庄惠照[1] 王书运[1] 高海永[1] 田德恒[1] 吴玉新[1] 何建廷[1] 刘亦安[1] 

机构地区：[1]山东师范大学半导体研究所,济南250014

出　　处：《微纳电子技术》2005年第3期119-122,共4页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(90201025;90301002)

摘　　要：利用磁控溅射系统,在Si(111)衬底上的SiC缓冲层上溅射Ga2O3纳米颗粒薄膜。然后令该薄膜在NH3中高温退火,在产物中发现直径为数百纳米的GaN棒。直径如此大的GaN棒在国内外鲜有报道。该晶体棒被认为是在Ga2O3薄膜与NH3自组装反应过程中形成。该工艺可为合成大尺寸GaN一维结构提供一条新的途径。Films consisting of Ga2O3 nano-particles were deposited onto SiC intermediate layerd over silicon (111) wafers by magnetron sputtering system. Subsequently, these films were annealed in NH3 atmosphere. Thick GaN crystalline stick with a diameter of several hundreds of nanometers was presented. It is rarely to be reported for GaN sticks with so big diameter. It is thought these GaN sticks was produced in Ga2O3 self-assembly reaction with NH3. The technology is expected to provide a new method to synthesize GaN 1D structure with big diameter.

关 键 词：磁控溅射 自组装反应 GaN晶体棒 

分 类 号：TN304.23[电子电信—物理电子学]