一种双扩散p阱nMOS器件新结构  

A New Double Diffused p-Well nMOS Structure

作　　者：秦祖新[1] 曹广军[1] 刘三清[1] 

机构地区：[1]华中理工大学固体电子学系

出　　处：《微电子学》1994年第4期17-21,共5页Microelectronics

摘　　要：本文介绍了一种适用于ＶＤＭＯＳ功率集成电路的双扩散ｐ阱ｎＭＯＳ器件新结构，该结构具有与ＶＤＭＯＳ工艺完全兼容和加工工艺简单的特点。利用这种结构可实现ｎＭＯＳ处理电路与衬底间的ｐｎ结隔离，并且隔离电压接近ＶＤＭＯＳ管的耐压。通过调节源、漏扩散窗口间距，可以在小范围内调整ｎＭＯＳ管的阈值电压。这种双扩散ｎＭＯＳ器件结构，特别适合于制作单驱动器件的ＭＯＳ功率集成电路。A new double-diffused p-well nMOS device structure for VDMOS in power IC′s is described in the paper.Its manufacturing process is simple and fully compatible with that of VDMOS′s.With this new structure,p-n junction isolation between nMOS control cell in low voltage and the substrate region with high voltage can be implemented. And the isolation blocking voltage is close to the breakdown voltage in VDMOS′s.The threshold voltage of the nMOS transistor can be adjusted in a small range by varying the space between source and drain diffusion、windows.This structure is well suited to MOS power IC′s with a single VDMOS device.

关 键 词：双扩散 MOS器件 结构 P阱 

分 类 号：TN386.1[电子电信—物理电子学]