SEU的二维数值模拟  

Two Dimension Value Simulation of SEU

作　　者：宋哲[1] 王莉[1] 陆剑侠[2] 许仲德[2] 

机构地区：[1]辽宁大学物理系,沈阳110036 [2]东北微电子研究所,沈阳110032

出　　处：《微处理机》2005年第1期37-39,共3页Microprocessors

摘　　要：本文阐述了单粒子效应原理和损伤机理,对MEDICI软件进行了简要介绍。运用MEDICI软件分别对体硅和SOI(Silicon-On-Insulator)衬底材料进行CMOS SRAM的SEU(Single -Event Upset)模拟实验,得出实验结果,并对实验结果进行分析,证明了SOI材料有良好的抗辐射加固特性,体现出SOI材料的优越性。This paper elaborates the principle of SEU and the mechanism of damnify. The software of MEDICI is introduced. By MEDICI, simulation experiments about CMOS SRAM were conducted on body silicon and SOI (Silicon - On - Insulator) material. The experimental results were obtained and analyzed, they prove SOI material with good and -irradiation harden characteristic, embody the superioirity.

关 键 词：SEU模 拟 SOI 抗辐射 

分 类 号：TN3[电子电信—物理电子学]