立式高真空MOCVD装置及GaN外延生长与器件制备  

Development of Vertical High-Vacuum MOCVD and Its Applications in GaN Epitaxial Growth and GaN-Based Device Fabrication

作　　者：朱丽萍[1] 叶志镇[1] 赵炳辉[1] 倪贤锋[1] 赵浙[1] 

机构地区：[1]浙江大学硅材料国家重点实验室

出　　处：《真空科学与技术学报》2004年第6期448-450,共3页Chinese Journal of Vacuum Science and Technology

基　　金：国家重点基础研究专项经费"973"(NoG20000683);教育部留学回国人员科启动基金;教外司留[2003]406号;国家自然科学基金重点项目(No90201038)

摘　　要：自行设计了一套具有创新性的研究型立式高真空MOCVD装置 ,能够较好的调节反应气体的流动状态 ,从而在衬底上生长大面积均匀的外延层。利用该装置在蓝宝石和硅单晶衬底上成功地生长出高质量的GaN晶体薄膜。在蓝宝石衬底上生长出n、p型GaN以及多量子阱多层结构材料 ,并成功制备了GaN基多层量子阱结构的蓝光发光二极管 ,性能良好 ,具有实用价值。A novel type of vertical high-vacuum MOCVD system has been developed to grow hig hly uniform epitaxial films of fairly large area by precisely controlling the re active gases flow,on sapphire and silicon substrates,respectively.High quality,p -type and n-type GaN crystalling films as well as multi-layered material for qua ntum-well fabrication have been successfully grown on sapphire substrate.Moreove r,blue light emission diodes of GaN multi-layer,grown with the system,were also fabricated with satisfactory performance.

关 键 词：MOCVD GAN 外延生长 多量子阱 发光二极管 

分 类 号：TN304.2[电子电信—物理电子学]