SrTiO_3金属-绝缘体-半导体结构的介电与界面特性  

Dielectric and interface characteristics of SrTiO_3 with a MIS structure

作　　者：马建华[1] 孙璟兰[1] 孟祥建[1] 林铁[1] 石富文[1] 褚君浩[1] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083

出　　处：《物理学报》2005年第3期1390-1395,共6页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :60 2 2 15 0 2;60 2 2 3 0 0 6);上海市A M基金 (批准号 :0 3 16)资助的课题 .~~

摘　　要：采用金属有机分解法在p型Si衬底上制备了SrTiO3(STO)薄膜 .研究了STO薄膜金属 绝缘体 半导体 (MIS)结构的介电和界面特性 .结果表明 ,STO薄膜显示出优异的介电性能 ,在 10kHz处的介电常数约为 10 5 ,损耗低于 0 0 1,这来源于多晶结构和良好的结晶性 ;MIS结构中的固定电荷密度Nf 和界面态密度Dit分别约为 1 5× 10 1 2 cm- 2 和(1 4— 3 5 )× 10 1 2 cm- 2 eV- 1 ,这主要与Si STO界面处形成的低介电常数界面层有关 .SrTiO3(STO) films were deposited onto the p-type Si substrates by metal-organic decomposition (MOD) technique. The dielectric and interface characteristics of STO with a metal-insulator-semiconductor( MIS) structure were investigated. The results showed that the dielectric constant was about 105 and the dissipation factor was lower than 0.01 for our STO films at a frequency of 10kHz. The excellent dielectric properties were attributed to the polycrystalline structure with good crystallinity. The fixed charge density N-f and the interface-trap density D-it were calculated to be about 1.5 x 10(12)cm(-2) and (1.4-3.5) X 10(12)cm(-2) eV(-1), respectively. Both N-f and D-it were mainly connected with an interface layer with low dielectric constant formed at the interface of Si/STO.

关 键 词：半导体结构 界面态密度 SI衬底 低介电常数 界面特性 损耗 薄膜 SRTIO3 绝缘体 介电性能 

分 类 号：O472[理学—半导体物理]