VHF-PECVD制备不同氢稀释条件下硅薄膜特性分析  

Analysis of Silicon Thin Film Prepared at Different Hydrogen Dilutions by VHF-PECVD

作　　者：张晓丹[1,2,3] 高艳涛[1,2,3] 赵颖[1,2,3] 朱锋[1,2,3] 魏长春 孙建[1,2,3] 侯国付[1,2,3] 薛俊明[1,2,3] 张德坤[1,2,3] 任慧志[1,2,3] 耿新华[1,2,3] 熊绍珍[1,2,3] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所,天津300071 [2]天津市光电子薄膜器件与技术重点实验室,天津300071 [3]光电信息技术科学教育部重点实验室(南开大学,天津大学),天津300071

出　　处：《人工晶体学报》2005年第1期56-59,64,共5页Journal of Synthetic Crystals

基　　金：国家"973"重大基础研究项目 (No.G2000028202;G2000028203 );教育部项目 (No. 02167 );国际合作项目 ( 2002DFG00051 );"863"重大项目(No. 2002303261)

摘　　要：本文集中报导了不同硅烷浓度条件下,制备的系列硅薄膜电学特性和结构特性的分析研究。结果表明:随着硅烷浓度的逐渐减小,材料逐渐地由非晶向微晶转变。傅立叶变换红外吸收 (FTIR)的测试结果表明:微晶硅材料存在着自然的不稳定性,表现为氧含量随着时间的推移而增多。而且,微结构因子(IR)的结果给出:对于适用于电池有源层的微晶硅材料来说,其IR不能太大,也不能太小,本实验中相对好的微晶硅材料其IR为 31%。Samples prepared at different silane concentrations (SCs) were studied with the analysis of electronic and structural properties. The results show that the materials change from amorphous to microcrystalline silicon with the decrease of SC. The results of FTIR indicate that microcrystalline silicon exists instability, and the oxygen content increases with the process of time. In addition, the results of IR show that microcrystalline silicon with good properties should have a moderate value. As for our materials, IR of the material characterized relatively good properties was 31%.

关 键 词：硅材料 硅薄膜 VHF-PECVD 有源层 微晶 晶向 电学特性 度条件 因子 不稳定性 

分 类 号：O157.5[理学—数学] TN304[理学—基础数学]