基于对数关系的多量子阱VCSELs阈值特性研究  

Study on Threshold Properties of Muti-quantum Well VCSELs for Logarithmic Relation

作　　者：吴文光[1] 范广涵[1] 李华兵[1] 陈贵楚[1] 陈练辉[1] 雷勇[1] 黄坤[1] 

机构地区：[1]华南师范大学光电子材料与技术研究所,广东广州510631

出　　处：《光电子技术与信息》2005年第1期23-26,共4页Optoelectronic Technology & Information

基　　金：国家科技攻关项目(00-068)

摘　　要：采用光增益与载流子浓度的对数关系,考虑到非辐射复合的影响,从理论上推导出多量子阱垂直腔面发射半导体激光器(VCSELs)的速率方程。讨论了阈值电流密度、最佳阱数等与器件参数(腔长和端面反射率)之间的依赖关系。为改善VCSELs阈值特性和优化器件结构提供了理论依据。Based on changing the logarithmic relation of gain on carrier density, the rate equations were described for multi-quantum well of vertical cavity surface emitting laser (VCSELs) taking into account the influence of nonradiative depopulation rate. The relation of device parameter (cavity length and the reflect coefficient of mirror) on threshold current and optimal well numbers was discussed. It will provide theoretical basis for improvement of threshold properties and and optimization of device constitution.

关 键 词：垂直腔面发射半导体激光器 阈值电流密度 最佳阱数 腔长 端面反射率 

分 类 号：TN248.4[电子电信—物理电子学]