Mn注入n型Ge单晶的特性研究  

Study of Mn-implanted n-type Ge

作　　者：刘力锋[1] 陈诺夫[1] 尹志岗[1] 杨霏[1] 周剑平[1] 张富强[1] 

机构地区：[1]中国科学院半导体研究所半导体材料科学重点实验室,北京100083

出　　处：《功能材料与器件学报》2005年第1期15-18,共4页Journal of Functional Materials and Devices

基　　金：国家自然科学基金G60176001及G60390072;国家重大基础研究计划项目G20000365及G2002CB311905

摘　　要：采用离子能量为100keV,剂量为3×1016cm-2的离子注入技术,室温下往n型Ge(111)单晶衬底注入Mn+离子,注入后的样品进行400℃热处理。利用X-射线衍射法(XRD)和原子力显微镜(AFM)对注入后的样品进行了结构和形貌分析,俄歇电子能谱法(AES)进行了组分分析,交变梯度样品磁强计(AGM)进行了室温磁性测量。结果表明原位注入样品的结构是非晶的,热处理后发生晶化现象。没有在样品中观察到新相形成。Mn离子较深的注入进Ge衬底,在120nm处Mn原子百分比浓度达到最高为8%。热处理后的样品表现出了室温铁磁特性。Mn+ irons were implanted into n-type Ge (111) single crystal at room temperature by ion implantation method with energy of 100 keV and a dose of 3 × 1016 cm-2. Subsequently annealing was per formed at 400°C. Structural and morphological properties of samples were analyzed by X-ray diffraction measurements (XRD) and Atomic force microscopy (AFM). Compositional properties were studied by Auger electron spectroscopy (AES). Magnetic properties were investigated by Alternating gradient magnetometer (AGM) at room temperature. Results show that as-implanted sample is amorphous and after annealing the crystal structure of Ge is restored. There are no new phases found. Manganese ions are deeply implanted into germanium substrate and the highest manganese atomic concentration is 8% at the depth of 120 nm. The annealed sample shows ferromagnetic behavior at room temperature.

关 键 词：离子注入 锗 铁磁性 稀磁半导体 

分 类 号：TN304.7[电子电信—物理电子学]