氧化镓纳米带的合成和发光性质研究  

Growth and Optical Characterization of Ga_2O_3 Nanobelts

作　　者：郭彦[1] 吴强[1] 王喜章[1] 胡征[1] 陈懿[1] 

机构地区：[1]介观化学教育部重点实验室江苏省纳米技术重点实验室南京大学化学系,南京210093

出　　处：《无机化学学报》2005年第5期669-672,共4页Chinese Journal of Inorganic Chemistry

基　　金：国家自然科学基金(No.20471028);江苏省高技术项目(No.BG2003029);"863"课题(No.2003AA302150)资助项目。

摘　　要：采用化学气相沉积法,以碳纳米管作还原剂还原Ga2O3粉末,生成的气态Ga2O和载气Ar中的微量O2反应,在多孔氧化铝模板上沉积得到了Ga2O3纳米带。用扫描电子显微镜,透射电子显微镜和选区电子衍射对产物的结构和形态进行表征,发现产物为β鄄Ga2O3纳米带,宽度在20￣500nm之间,厚度为5￣100nm,长度可达几十微米。产物中还有几微米宽的Ga2O3纳米片。光致发光谱结果表明β鄄Ga2O3纳米带能发射蓝光和紫外光。文中还简单推测了β鄄Ga2O3纳米带的形成机理。Ga2O3 nanobelts were prepared on anodic porous alumina substrate by chemical vapor deposition, with Ga2O3 powder as precursor and carbon nanotubes as reductant. The structure of the product was characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy and selected area electronic diffraction. It was confirmed that the nanobelts were single crystalline β-Ga2O3, with the width and thickness ranging from 20 nm to 1 μ m. and 5 to 100 nm, respectively. The length of the nanobelts could reach millimeter. Photoluminescence spectrum indicated that these Ga2O3 nanobelts had blue and ultraviolet emission and a blue-shift was observed due to the nanostructure. The formation mechanism was briefly discussed.

关 键 词：纳米带 性质研究 氧化镓 GA2O3 化学气相沉积法 多孔氧化铝模板 扫描电子显微镜 透射电子显微镜 合成 选区电子衍射 光致发光谱 碳纳米管 形成机理 还原剂 产物 紫外光 微米 

分 类 号：TB383[一般工业技术—材料科学与工程] TS202.3[轻工技术与工程—食品科学]