薄SiO_2膜的等离子体氮化研究  

Study of Plasma Nitridation for Thin SiO_2 Films

作　　者：蔡跃明[1] 吕世骥[1] 简跃光 

机构地区：[1]南京工学院微电子中心

出　　处：《微电子学与计算机》1989年第6期7-11,共5页Microelectronics & Computer

摘　　要：本文论述了薄SiO_2膜的低温等离子体氮化。报道了所测试的氮化SiO_2膜的电学性能。利用AES、IR和SIMS等表面分析技术分析了膜的结构和组份,讨论了氮化条件对膜性质的影响,并提出了物理模型加以解释。This paper deals with a study of plasma nitridation for thin SiO_2 films at low temperature. The electrical charactertics of the nitrided SiO_2 films were measured, and the structure and composition of the resulting films were analysed by the surface analysis methods of AES, IR and SIMS. The effect of the nitridation conditions on the characteristics was also discussed and explained by the physical model proposed.

关 键 词：SIO2膜 等离子体氮化 MOS器件 

分 类 号：TN386.104[电子电信—物理电子学]