硅棚MOS结构的辐射感生界面态  

Radiation-Induced Interface State of Silicon Gate MOS Structure

作　　者：张玲珊[1] 吾勤之[1] 刘昶时[1] 王方 赵元富 甘勇 

机构地区：[1]中科院新疆物理研究所 [2]骊山微电子公司

出　　处：《微电子学与计算机》1989年第12期7-11,共5页Microelectronics & Computer

基　　金：中科院青年奖励基金

摘　　要：本文主要讨论栅氧化层厚度、辐照总剂量以及偏置电场对硅栅MOS结构辐照感生氧化物电荷△D_(it)和界面态密度△D_(it)的影响。实验表明,在Co^(60)γ射线辐照下,MOS结构的辐射损伤与栅氧化层厚度T_(cx)、辐射总剂量D_(ose)及偏置电场E_(?)有着强烈的依赖关系。由上述辐照损伤规律及MOSFET阈值电压漂移公式,可获得加固MOS器件的重要参数—栅氧化层厚度的最佳设计,这为研究Si—SiO_2界面的辐射损伤机制及MOS器件的抗核加固工程提供了重要的实验依据。The effect of the gate oxite thickness, the total irradiated dose, the oxide electronic tield on the radiation-induced oxide charge (△D_(ot)) and the interfacial state density (△Dit) of Polysilicou gate MOS structure are discussed in this paper. The experimental results indicated that under Co^(60) Gamma-ray irradiation, radiation damage of MOS structure strongly depends on the gateoxide thick ness (To(?)) , the total irradiated dose (Do(?)) and the oxide electric field applied during irradiation(Eox).Acco(?)ding to the above radiation damage repularity and threshold voltage shift formula of MOSFET have obtained optimization design of gate oxide thickness.It is an important paramenter for hardened MOS. devicess. The important experimental evidence is provided to study the radiation damage Mechanism of Si-SiO_2 interface and the rahiation harhening engineering of MOS devicds.

关 键 词：MOS器件 辐射 硅栅器件 界面态 

分 类 号：TN386.4[电子电信—物理电子学]