AlN-Si_3N_4膜  

AlN-Si_3N_4 FILM

作　　者：孙金坛[1] 邱德润[1] 

机构地区：[1]合肥工业大学应用物理系,合肥230009

出　　处：《真空科学与技术》1994年第6期449-452,共4页Vacuum Science and Technology

摘　　要：用直流反应溅射沉积AlN－Si3N4膜。通过红外吸收光谱和X射线衍射来验证薄膜的结构。通过各种测量，给出了吸收系数、电阻率、应力、硬度和结合力。实验表明，AlN－Si3N4膜具有良好的光、电和机械特性。We have selected DC reactive sputtering to deposit AlN-Si3N4 film. The infrared absorption spectrum and X-ray diffraction indicate the constitution of AlN-Si3N4 film. We measured the optical absorption,resistivity,film stress,hardness and cohesive force. The experiments show that the AlN-Si3N4 film has excellent properties.

关 键 词：化学气相沉积 直流反应溅射 AlN-Si3N4膜 

分 类 号：O484[理学—固体物理] TM215.306[理学—物理]