氧氮共渗  

出　　处：《表面工程：英文版》2005年第2期14-16,共3页

摘　　要：Characteristics of silicon oxynitrides made by ECR plasmas； Characterization and comparison of PECVD silicon nitride and silicon oxynitride dielectric for MIM capacitors；Characterization of silicon oxynitride thin films deposited by ECR-PECVD； Characterization of silicon oxynitrides and high-k dielectric materials by angle-resolved X-ray photoelectron

关 键 词：氧氮共渗 氮氧化硅 ECR等离子体 薄膜沉降 

分 类 号：TG156.82[金属学及工艺—热处理]