SY509-3-64 [篇名] Degradation and SILC effects of RPECVD sub-2.0nm oxide/nitride and oxynitride dielectrics under constant currentstress;SY509-3-65 [篇名] Effect of Microstructural Variables on the Erosion of Silicon...
Characteristics of silicon oxynitrides made by ECR plasmas; Characterization and comparison of PECVD silicon nitride and silicon oxynitride dielectric for MIM capacitors;Characterization of silicon oxynitride thin f...