带有锥形增益区14xxnm量子阱激光器的研制  

14xxnm Quantum Well Lasers with Tapered Gain Region

作　　者：张洪波[1] 韦欣[1] 朱晓鹏[1] 王国宏[1] 张敬明[1] 马骁宇[1] 

机构地区：[1]中国科学院半导体研究所光电子器件国家工程中心,北京100083

出　　处：《光子学报》2005年第4期496-498,共3页Acta Photonica Sinica

基　　金：国家 863计划(2001AA312270)资助项目

摘　　要：利用MOCVD生长了14xxnmAlGaInAs/AlInAs/InP应变量子阱外延片 采用带有锥形增益区脊型波导结构和普通条形脊型波导结构在相同的实验条件下制作800μm腔长激光器管芯,在相同的驱动电流下前者可以获得更高的输出光功率,而且P Ⅰ曲线线性度较好、饱和电流高1200μm腔长带有锥形增益区脊型波导结构管芯功率达到500mW,饱和电流3A以上,峰值波长1460nm。The 14xxnm AlGaInAs/AlInAs/InP Strained Quantum Well Lasers with Tapered Gain Regions and with Ridge Waveguide is fabricated under the same experimental condition. The laser structure is grown by MOCVD. The output power and the saturation current of the former structure is higher than the latter under the same driving current when the cavity length is 800 μm. When the cavity length is 1200 μm the output power above 500 mW and the saturation current above 3 A have been achieved for the former structure. The measured vertical and parallel divergence angle are 39° and 11°, respectively.

关 键 词：14xxnm抽运源 锥形增益区 量子阱激光器 

分 类 号：TN248.4[电子电信—物理电子学]