激光刻图在制造 a-Si 光伏器件中的应用  

Application of Laser Patterning in Producing a-Si Photovoltaic Devices

作　　者：钟伯强[1] 肖兵[1] 

机构地区：[1]中国科学院上海硅酸盐研究所

出　　处：《无机材料学报》1989年第3期269-275,共7页Journal of Inorganic Materials

摘　　要：描述了在集成型 a-Si 光伏器件的制造中,利用高功率激光束进行刻图的新方法。作为激光刻图中材料除去的模型,被刻蚀材料的蒸汽压对材料除去会带来很大的影响。在制备 a-Si 光伏器件中,侧边接触的器件结构对激光刻图技术是很合适的。激光的平均功率或激励电流,重复频率、焦距和扫描速度是激光刻图技术的基本参数。我们列出了刻蚀 TCO、a-Si 和背电极薄膜的一些刻蚀条件,可以发现要刻蚀不同的薄膜,需控制这些条件以达到最佳化。In this paper,a new patterning method by using a high power laser beam forthe integrated a-Si photovoltaic devices has been described.As a model of the laserpatterning for removing films,it has been to be taken into consideration that thevapor pressure of the evaporated material has great influence on the removal mec-hanism.The device structure of side contact is suitable for laser patterning techno-logy in producing a-Si photovoltaic devices.It has been found that the averagepower,the repetitive frequency,the focal length,and the scanning speed are basicparameters for the laser patterning.Some processing conditions have been shown forpatterning TCO,a-Si,and back electrode films.It can be shown that it is necessaryto select suitable conditions for laser patterning on different films.

关 键 词：激光刻图 α-Si 光伏器件 

分 类 号：TM914.41[电气工程—电力电子与电力传动]