MOCVD制备用于薄膜太阳电池的ZnO薄膜研究  

Research on ZnO Thin Films Prepared by MOCVD for Solar Cells

作　　者：徐步衡[1] 薛俊明[1] 赵颖[1] 张晓丹[1] 魏长春[1] 孙建[1] 刘芳芳[1] 何青[1] 侯国付[1] 任慧志[1] 张德坤[1] 耿新华[1] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所

出　　处：《光电子．激光》2005年第5期515-518,共4页Journal of Optoelectronics·Laser

基　　金：国家"973"重点基础研究资助项目( G2000028202; G2000028203 );教育部重点资助项目( 02167 );国家合作资助项目(2002DFG00051;023100711);天津市自然科学基金资助项目(043604911)

摘　　要：利用金属有机物化学气相沉积(MOCVD)生长技术,采用二乙基锌(DEZ)作Zn源和H2O作O源,使用B2H6 为掺杂气体,制备出了光电特性稳定的低电阻率、高透过率的ZnO薄膜。制备条件为:衬底温度160 ℃,DEZ的流量为342μmol/min,H2O流量为500μmol/min,反应气压为5×133.32 Pa,B2H6 流量为5 sccm,掺杂手段为气体掺杂。在薄膜面积为10 cm×10 cm、厚度为550 nm时,方块电阻为40Ω/□。透过率>85%。The textured ZnO films with high conductivity and high transparency have been grown by the metal-organic chemical vapor deposition (MOCVD). The reactive gas diethylzinc (DEZ) is used as zinc fountain. And H2O is used as oxygen fountain. The B2H6 gas has been successfully used as a n-type dopant. The substrate temperature is 160°C, the flow rate of DEZ is 342 μmol/min, and the flow rate of H2O is 500 μmol/min. The total press of the reacting room is 5×133.32 Pa. The B2H6 gas is mixed with the DEZn and flows into the reacting room. The low sheet resistance as 40 Ω/ and the high transparency as 85% upwards at the range of visible light and infrared have been obtained for 550 nm thick ZnO film at low temperature of 160°C.

关 键 词：ZnO薄膜 薄膜太阳电池 MOCVD 金属有机物化学气相沉积 备用 生长技术 二乙基锌 低电阻率 光电特性 衬底温度 制备条件 方块电阻 H2O 透过率 min MOL 掺杂 流量 500 膜面积 气体 

分 类 号：TN304.21[电子电信—物理电子学] TM914.42[电气工程—电力电子与电力传动]