长波光伏碲镉汞材料上的欧姆接触  

Ohmic Contacts on Long Wave Photovoltaic HgCdTe

作　　者：赵鸿燕[1] 鲁正雄[1] 赵岚[1] 成彩晶[1] 

机构地区：[1]中国空空导弹研究院,河南洛阳471009

出　　处：《红外技术》2005年第3期260-262,共3页Infrared Technology

摘　　要：碲镉汞器件性能与材料及诸多工艺因素相关,而材料与电极间的接触性能是必须要解决的基础问题之一。利用金属In/Au在光伏长波碲镉汞材料上做了接触性能研究,通过实验获得了较理想的欧姆接触,测试后计算出In与n型和p型HgCdTe材料间的接触电阻率分别为3.25×10-4?·cm2、8.95×10-4?·cm2。Performance of HgCdTe devices is limited by many factors shch as materials and technics,etc.Andthe electrical characteristics of electrode contacts on HgCdTe plays important roles.It is one of basal issue thatmust be solved. We do the research by using In/Au as contact on LW photovoltaic HgCdTe and achieve anideal ohmic contact. Measurements of specific contact resistance have shown that In/n-type HgCdTe andIn/p-type HgCdTe gave values of ρc=3.25×10-4?·cm2 to 8.95×10-4 ?·cm2.

关 键 词：碲镉汞材料 欧姆接触 光伏 长波 HGCDTE材料 接触电阻率 工艺因素 器件性能 基础问题 接触性能 性能研究 P型 In 

分 类 号：TN215[电子电信—物理电子学] TN305.93