Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides  

SIMOX埋氧层的总剂量辐射硬度对埋氧层中注氮剂量的敏感性(英文)

作　　者：郑中山[1] 刘忠立[1] 张国强[1] 李宁[1] 李国花[1] 马红芝[1] 张恩霞[2] 张正选[2] 王曦[2] 

机构地区：[1]中国科学院半导体研究所微电子研究与发展中心 [2]中国科学院上海微系统与信息技术研究所,上海200050

出　　处：《Journal of Semiconductors》2005年第5期862-866,共5页半导体学报（英文版）

摘　　要：In order to improve the total-dose radiation har dness of the buried oxides(BOX) in the structure of separation-by-implanted-oxygen(SIMOX) silicon-on-insulator(SOI),nitrogen ions are implanted into the buried oxides with two different doses,2×10 15 and 3×10 15 cm -2 ,respectively.The experimental results show that the radiation hardness of the buried oxides is very sensitive to the doses of nitrogen implantation for a lower dose of irradiation with a Co-60 source.Despite the small difference between the doses of nitrogen implantation,the nitrogen-implanted 2×10 15 cm -2 BOX has a much higher hardness than the control sample (i.e.the buried oxide without receiving nitrogen implantation) for a total-dose irradiation of 5×104rad(Si),whereas the nitrogen-implanted 3×10 15 cm -2 BOX has a lower hardness than uhe control sample.However,this sensitivity of radiation hardness to the doses of nitrogen implantation reduces with the increasing total-dose of irradiation (from 5×104 to 5×105rad (Si)).The radiation hardness of BOX is characterized by MOS high-frequency (HF) capacitance-voltage (C-V) technique after the top silicon layers are removed.In addition,the abnormal HF C-V curve of the metal-silicon-BOX-silicon(MSOS) structure is observed and explained.为了提高SIMOX(separation -by -implanted oxygen)SOI(silicon -on -insulator)结构中埋氧层(BOX)的总剂量辐射硬度,埋氧层中分别注入了2×1015cm-2和3×1015 cm-2 剂量的氮.实验结果表明, 在使用Co 60 源对埋氧层进行较低总剂量的辐照时,埋氧层的总剂量辐射硬度对注氮剂量是非常敏感的.尽管埋氧层中注氮剂量的差别很小,但经5×104rad(Si)剂量的辐照后,注入2×1015 cm-2 剂量氮的埋氧层表现出了比未注氮埋氧层高得多的辐射硬度,而注入3×1015cm-2剂量氮的埋氧层的辐射硬度却比未注氮埋氧层的辐射硬度还低.然而,随辐照剂量的增加(从5×104 到5×105rad(Si)),这种埋氧层的总剂量辐射硬度对注氮剂量的敏感性降低了.采用去掉SOI顶硅层的MOS高频C -V技术来表征埋氧层的总剂量辐射硬度.另外,观察到了MSOS(metal -silicon- BOX- silicon)结构的异常高频C- V曲线,并对其进行了解释.

关 键 词：SIMOX buried oxide radiation-hardness nitrogen implantation 

分 类 号：TN304[电子电信—物理电子学]