垂直耦合自组织InAs双量子点中激子能的计算  

Excitonic energy of vertically stacked self-assmbled InAs quantum dots

作　　者：董庆瑞[1] 牛智川[1] 

机构地区：[1]中国科学院半导体研究所超晶格国家重点实验室,北京100083

出　　处：《物理学报》2005年第4期1794-1798,共5页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :60 0 2 5 410 ;60 1760 0 6)资助的课题~~

摘　　要：在有效质量近似条件下研究了垂直耦合的自组织InAs GaAs量子点的激子态 .在绝热近似条件下 ,采用传递矩阵方法计算了电子和空穴的能谱 .通过哈密顿量矩阵的对角化 ,对电子和空穴间的库仑相互作用进行了精确处理 .讨论了两量子点间的垂直距离对激子基态能的影响 .从基态波函数概率分布的角度 ,讨论了激子的束缚能 .计算了重空穴和轻空穴激子的基态能随外部垂直磁场变化的函数关系 .计算了量子点大小 (量子点半径 )对激子能的影响 .We have studied the exciton states in vertically stacked self-assembled quantum disks within the effective mass approximation. The energy spectrum of the electron and hole is calculated using the transfer matrix formalism in the adiabatic approximation. The Coulomb interaction between the electron and the hole is treated accurately by the direct diagonalization of the Hamiltonian matrix. The effect of the vertical alignment of the disks on the ground energy of heavy- and light-hole exciton is presented and discussed. The binding energy is discussed in terms of the probability of the ground wave function. The ground energy of heavy- and light-hole excitons as a function of the magnetic field is presented and the effect of the disk size (the radius of disks) on the exciton energy is discussed.

关 键 词：垂直耦合自组织 砷化铟 半导体量子点 激子能 对角化 

分 类 号：O471[理学—半导体物理]