原子层淀积制备金属氧化物薄膜研究进展  

Atomic layer deposition of metal oxide films

作　　者：卢红亮[1] 徐敏[1] 张剑云[1] 陈玮[1] 任杰[1] 张卫[1] 王季陶[1] 

机构地区：[1]复旦大学微电子学系ASIC与系统国家重点实验室,上海200433

出　　处：《功能材料》2005年第6期809-812,816,共5页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(60176013);上海市科委重点资助项目(04JC14013)

摘　　要：原子层淀积(ALD)技术作为一种先进的薄膜制备方法近年来越来越得到重视,它能精确地控制薄膜的厚度和组分,实现原子层级的生长,生长的薄膜具有很好的均匀性和保形性,因而在微电子和光电子等领域有广泛的应用前景。本文综述了ALD技术的基本原理,及其在金属氧化物薄膜制备上的研究进展。Atomic layer deposition (ALD) is a new method for preparing films,which has the ability to control film thickness and composition accurately.Because films are deposited layer by layer,ALD has a lot of advantages,such as large area uniformity,excellent conformality.We review the mechanism and application of ALD to deposit metal oxide films in this paper.It has been noticed that ALD has more and more important potential application in high-k materials for MOSFET gate dielectrics.

关 键 词：原子层淀积(ALD) 金属氧化物薄膜 高K材料 

分 类 号：TB43[一般工业技术] TN305.5[电子电信—物理电子学]