与HBT工艺兼容的新型负阻器件的研制与分析  

Fabrication and Simulation of a Novel NDR Device Compatible with HBT Process

作　　者：齐海涛[1] 郭维廉[1] 张世林[1] 梁惠来[1] 毛陆虹[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《固体电子学研究与进展》2005年第2期202-206,共5页Research & Progress of SSE

基　　金：国家重点基础研究计划项目(973)(批准号2002CB311905);天津大学青年教师基金资助

摘　　要：在HBT工艺基础上,通过对器件结构的特殊设计,研制出了一类新型三端负阻器件,其恒压控制型负阻的PVCR大于800,并伴有恒流控制型负阻。通过atlas器件模拟软件进行模拟后对其物理机制进行了解释。该器件既能保持HBT高频、高速的特点,又具有负阻、双稳、自锁等特性,同时与普通台面HBT工艺兼容,易于集成,是一种具有研究和应用价值的新型负阻器件。Based on HBT manufacture technique, a novel three-terminal negative differential resistance (NDR) device has been prepared through special design of device structure, which has distinct voltage control NDR character and current control NDR character. The PVCR of voltage control NDR character is higher than 800. After simulation to DC character using atlas device simulator, the physics mechanism of NDR is explained. This type device compatible with HBT manufacture technique holds high speed, high frequency characters of HBT and bistability, self-latching characters derived from NDR, and has good research and application value.

关 键 词：负阻器件 异质结双极晶体管 电流峰谷比 器件模拟 

分 类 号：TN321[电子电信—物理电子学]