应用于深亚微米DSOI器件的埋氧层的制备  

Patterned SIMOX Technique for Deep Sub-Micron DSOI Devices

作　　者：陶凯[1] 董业民 易万兵[1] 王曦[1] 邹世昌[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所,上海200050 [2]中国上海宏力半导体制造有限公司,上海201203

出　　处：《Journal of Semiconductors》2005年第6期1187-1190,共4页半导体学报（英文版）

摘　　要：利用低剂量、低能量的SIMOX(separationbyimplantedoxygen)图形化技术实现了深亚微米间隔埋氧层的制备.在二氧化硅掩膜尺寸为172nm的情况下,可以得到间隔为180nm的埋氧层.通过TEM(transmissionelectronmicroscope)观察发现埋层形貌完整、界面陡峭、无硅岛及其他缺陷.该结果为DSOI(dain/sourceoninsulator)器件向更小尺寸发展奠定了工艺基础.Buried oxide at deep sub-micron intervals is successfully fabricated by patterned SIMOX techniques with low dosage and low energy.The distance between the buried oxide layers can be controlled to 180nm when the length of the silicon dioxide mask is 172nm.Good shape and sharp interface are observed by TEM with no silicon islands and other defects.This technique strongly supports the development of deep sub-micron DSOI devices.

关 键 词：DSOI SIMOX 埋氧层 

分 类 号：TN405[电子电信—微电子学与固体电子学]