Ni(Zr)Si薄膜热稳定性及其肖特基势垒二极管的电学特性  

Investigation On Thermal Stability of Ni(Zr)Si Thin Film and Electrical Characteristics of Its Schottky Barrier Diode

作　　者：黄伟[1] 卢建政[1] 张利春[1] 高玉芝[1] 金海岩[1] 

机构地区：[1]北京大学微电子学研究院,北京100871

出　　处：《Journal of Semiconductors》2005年第6期1197-1202,共6页半导体学报（英文版）

摘　　要：提出在Ni中掺入夹层Zr的方法来提高NiSi的热稳定性.具有此结构的薄膜,600～800℃快速热退火后,薄层电阻保持较低值,小于2Ω/□.经XRD和Raman光谱分析表明,薄膜中只存在低阻NiSi相,而没有高阻NiSi2相生成.Ni(Zr)Si的薄层电阻由低阻转变为高阻的温度在800℃以上,比没有掺Zr的镍硅化物的转变温度上限提高了100℃.Ni(Zr)Si/Si肖特基势垒二极管能够经受650～800℃不同温度的快速热退火,肖特基接触特性良好,肖特基势垒高度为0.63eV,理想因子接近于1.A novel technique to add a thin Zr interlayer in the nickel film is put forward to improve the thermal stability of nickel silicide.After rapid thermal annealing(RTA) at 600～800℃,Ni(Zr)Si film exhibits a low sheet resistance of less than 2Ω/□.XRD and Raman spectral analyses both show there exists NiSi phase but no NiSi 2 phase in the Ni(Zr)Si film.The transformation temperature from low resistance phase to high resistance phase is above 800℃,which is 100℃ higher than that of NiSi.The electrical characteristics of the fabricated Ni(Zr)Si/Si Schottky barrier diode with the structure of guard ring are that the barrier height and the ideal factor are about 0.63eV and close to 1,respectively.It further proves that the presence of Zr element in Nickel silicide is effective in promoting thermal stability and electrical characteristics of Nickel monosilicide.

关 键 词：Ni(Zr)Si 热稳定性 X射线衍射 RAMAN光谱 肖特基二极管 

分 类 号：TN304.05[电子电信—物理电子学]