注氮工艺对SOI材料抗辐照性能的影响  

Effect of Nitrogen Implantation Technologies on Total Dose Rad-Hardness of SIMON Materials

作　　者：张恩霞[1] 钱聪[1] 张正选[1] 王曦[1] 张国强[2] 李宁[2] 郑中山[2] 刘忠立[2] 

机构地区：[1]中国科学院上海微系统与信息技术研究所,上海200050 [2]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》2005年第6期1269-1272,共4页半导体学报（英文版）

基　　金：国家杰出青年基金(批准号:59925205);上海市基础研究基金(批准号:02DJ14069);国家自然科学基金(批准号:10305018)资助项目~~

摘　　要：分别采用一步和分步注入的工艺制备了氧氮共注形成SOI(SIMON)材料,并对退火后的材料进行了二次离子质谱(SIMS)分析,结果发现退火之后氮原子大多数聚集在SiO2/Si界面处.为了分析材料的抗辐照加固效果,分别在不同方法制作的SIMON材料上制作了nMOS场效应晶体管,并测试了晶体管辐射前后的转移特性.实验结果表明,注氮工艺对SOI材料的抗辐照性能有显著的影响.Separation by implantation of oxygen and nitrogen (SIMON) materials are fabricated by one-step and two-step annealing,respectively.The distribution of the ions in the wafers is analyzed by secondary ions mass spectrometer (SIMS),and the results show that many nitrogen ions are collected at the interfaces of SiO 2/Si after annealing.In order to investigate the rad-hardness of the materials,nMOSFETs are fabricated on the SIMOX and SIMON wafers,respectively.The I-V characteristics of the transistors are measured before and after the total dose irradiation.The experiment results show that the total dose rad-hardness of the SIMOX materials can be improved by nitrogen ion implantation and the implantation technology plays an important role.

关 键 词：氧氮共注 SIMON SOI 离子注入 

分 类 号：TN304.1[电子电信—物理电子学]