Ba_(0.6)Sr_(0.4)TiO_3薄膜的微结构及铁电性能研究  

Microstructures and Ferroelectric Properties of Ba_(0.6)Sr_(0.4)TiO_3 Thin Films

作　　者：陈宏伟[1] 杨传仁[1] 符春林[1] 赵莉[1] 高志强[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,成都610054

出　　处：《真空科学与技术学报》2005年第2期96-99,共4页Chinese Journal of Vacuum Science and Technology

基　　金：国家973项目资助(Z01)

摘　　要：采用射频磁控溅射法制备了Ba_(0.6)Sr_(0.4)TiO_3(简称BST)薄膜材料,研究了BST薄膜的组成、晶体结构、表面形貌及介电性能。介电偏压特性曲线和电滞回线都表明其具有铁电性,厚度为500nm、晶粒尺寸为30nm的BST薄膜,介电系数电压变化率(介电调谐率)为29.4%,矫顽场强(EC)约为12.1kV/cm,并讨论了介电偏压特性曲线和电滞回线之间的联系,解释了电滞回线不对称的原因。Barium strontium titanate (BST) thin films were prepared by RF magnetron sputtering. The composition, crystalline structure, surface morphology and dielectric properties of BST thin films were studied. The ferroelectric properties were demonstrated by the curve of capacitance-voltage and the hysteresis loop. The tunability and the coercive electric field of the BST film, with thickness of 500 nm and grain size of 30 nm, are 29.4% and 12.1 kV/cm respectively. The origin of the asymmetric hysteresis and the relationship between the curve of capacitance-voltage and the hysteresis loop are also discussed.

关 键 词：性能研究 微结构 射频磁控溅射法 BST薄膜 电滞回线 特性曲线 电压变化率 薄膜材料 晶体结构 介电性能 表面形貌 晶粒尺寸 介电系数 铁电性 电调谐 不对称 偏压 

分 类 号：O484.41[理学—固体物理] TS202.3[理学—物理]