Langmuir探针诊断微波ECR非平衡磁控溅射等离子体  

Diagnostic of Microwave ECR Unbalanced Magnetron Sputtering Plasma by Langmuir Probe

作　　者：张治国[1] 陈小锰[1] 刘天伟[1] 徐军[1] 邓新禄[1] 董闯[1] 

机构地区：[1]大连理工大学三束材料改性国家重点实验室,大连116024

出　　处：《真空科学与技术学报》2005年第2期110-114,共5页Chinese Journal of Vacuum Science and Technology

基　　金：中物院联合基金(10176005)

摘　　要：利用朗谬尔探针诊断了ECR非平衡磁控溅射等离子体,给出了微观等离子体参量随宏观工艺参量变化关系。实验测得基片架附近等离子体密度达到1010～1011数量级,电子温度在(5～10)eV之间。随溅射靶功率变化,等离子体密度在130W时取得最大值;同样随微波源功率变化,等离子体密度在功率为850W时也达到最大值。电子温度、等离子体空间电位变化与等离子体密度呈相同趋势。Langmuir probe has been used to diagnose microwave electron cyclotron resonance (ECR) unbalanced magnetron sputtering plasma. The relationship between the micro-parameters of the plasma and the macro-parameters of the system is given. We observed that the ion density reaches (1010-1011) cm-3 near the substrate holder. The electron temperature ranges from 5 eV to 10 eV. With the increase in the sputtering target power, the ion density reaches the maximum 1.5 × 1011 cm-3 when the sputter target power is 130 W. It is also the maximum when the microwave power reaches 850 W. The electron temperature and plasma potential show the same tendencies with respect to the ion density.

关 键 词：非平衡磁控溅射 LANGMUIR 探针诊断 ECR 等离子体密度 等离子体参量 电子温度 功率变化 变化关系 电位变化 最大值 工艺参 数量级 溅射靶 微波源 片架 

分 类 号：TB43[一般工业技术] O531[理学—等离子体物理]