InGaAsSb多量子阱材料的光致发光特性研究  

Photoluminescence characteristic of InGaAsSb multiple quantum-well materials

作　　者：唐田[1] 张永刚[1] 郑燕兰[1] 李爱珍[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室

出　　处：《功能材料与器件学报》2005年第2期183-186,共4页Journal of Functional Materials and Devices

基　　金：国家863计划项目(No.2002AA313040);国家973计划项目(No.G20000683);国家自然科学基金重点项目(No.60136010)

摘　　要：研究了InGaAsSb多量子阱材料光致发光特性。通过实验数据分析和理论计算,发现对于分子束外延(MBE)法生长的InGaAsSb多量子阱材料,生长时的衬底温度决定着材料的质量,合适的衬底温度可以明显的增加其发射的光致发光强度;组分相同时,在一定范围内,随着阱厚的增加,其发射的光致发光波长也随着增加,但是随着阱厚增大,波长增加趋于平缓。Photoluminescence (PL) spectra of InGaAsSb multiple quantum-well materials (MQW) grown by molecular beam epitaxy (MBE) were investigated. The results show that the quality of InGaAsSb MQW materials depends on substrate temperature. An appropriate substrate temperature can increase the photoluminescence (PL) intensity. With the same composition, the PL wavelength increases with the increasement of well thickness to some extent, but it increases slowly beyond the range of well thickness.

关 键 词：INGAASSB 分子束外延 多量子阱 光致发光 

分 类 号：TN248.4[电子电信—物理电子学]