Ar^+能量及低能轰击对离子溅射铜钨薄膜结构的影响  

Influence of Ar^+ Energy and Low Energy Sputtering on Film Structure by Preparing Cu-W Thin Films with Ion Bind Sputtering (1)

作　　者：艾永平[1] 周灵平[1] 陈兴科[2] 刘俊伟[1] 李绍禄[1] 

机构地区：[1]湖南大学材料科学与工程学院,湖南长沙410082 [2]中南大学材料科学与工程学院,湖南长沙410008

出　　处：《河南科技大学学报（自然科学版）》2005年第3期1-3,共3页Journal of Henan University of Science And Technology:Natural Science

基　　金：国防科研基金资助项目(MKPT-03-146)

摘　　要：研究了双离子束溅射制备铜钨薄膜时Ar+能量及低能辅助轰击对膜结构的影响。实验结果表明,以铜为衬底,铜靶Ar+能量在1～2keV、钨靶Ar+能量在3keV左右时,离子溅射铜钨薄膜是以钨的非晶态为骨架机械夹杂着铜晶粒的方式存在。铜晶粒度随铜靶Ar+能量增加略有增大。当Ar+能量高到临界值(约为1.5keV)时,少量铜转变成单晶态和熔进钨形成固溶体。受晶体缺陷及晶格畸变影响,铜衍射峰会发生微小偏移。Based on preparation cu-w thin films with the two ion bind sputtering, the effects of Ar+ energy and low energy sputtering were investigated. The experimental result shows that non- crystal W framework exists with crystal cu in the Cu-W thin films, when Ar+ energy cu target lies in 1 - 2keV W target near 3keV. With the increase of Ar+ energy, the dimension of crystal Cu becomes bigger. When it comes to a critical point, a little changes to biggest and a little becomes the solid solution alloying with W. If low energy sputtering is used, some technical parameters must be controlled. Because of some crystal vice, Cu diffraction apex undergoes some minor excursion.

关 键 词：Ar^+ 离子溅射 能量 薄膜结构 低能 溅射制备 双离子束 晶格畸变 晶体缺陷 钨薄膜 非晶态 晶粒度 临界值 固溶体 衍射峰 铜靶 

分 类 号：TQ323.41[化学工程—合成树脂塑料工业] TN204[电子电信—物理电子学]