GaP中反位缺陷的电子结构  

ELECTRONIC STRUCTURE OF ANTISlTE DEFECT IN GaP

作　　者：申三国[1] 

机构地区：[1]郑州大学物理系

出　　处：《郑州大学学报（自然科学版）》1994年第3期52-55,共4页Journal of Zhengzhou University (Natural Science)

摘　　要：本文利用紧束缚的格林函数方法，确定了Ｇａｐ中Ｐ＿（Ｇａ）反位缺陷的波函数为深能级Ｅ的函数。理论给出反位原子上的超精细相互作用常数，同实验符合得很好，定性说明了ＧａＰ中Ｐ＿（Ｇａ）反位缺陷的次近邻原子有向外驰豫的趋势。The electronic wave function which is the function of the P_(Ga) defect energy is de-rived using a tight binding Green function thechnique. The hyperfine interaction constants of the an-tisite phosphorus given by the theory , are in good agreement with experimental results. It is predict-ed qualitatively that the nearest neighbor atoms of antisite phosphorus have a outward relaxationtrend.

关 键 词：半导体 电子结构 磷化镓 反位缺陷 

分 类 号：TN304.23[电子电信—物理电子学] O474[理学—半导体物理]