热载流子注入对MOS结构C─V和I─V特性的影响  

Effects of Hot Carrier Injection C─V and I─V Characteristics in MOS Structures

作　　者：赵策洲[1] 董建荣[1] 张德胜[1] 史保华[1] 

机构地区：[1]西安电子科技大学微电子研究所

出　　处：《固体电子学研究与进展》1994年第2期142-146,共5页Research & Progress of SSE

摘　　要：讨论了热载流子注入对ＭＯＳ结构Ｃ─Ｖ和Ｉ─Ｖ特性的影响。指出热载流子效应引起载流子陷落和界面态的产生，导致Ｃ─Ｖ特性曲线畸变、平带电压漂移和恒定电压下ＳｉＯ２漏电流随时间漂移。本文论述了这些漂移的机理，提出了漂移的ｔｎ物理模型，从而很好地解释了实验所观察到的现象。Effects of hot carrier injection on C-V and I-V characteristics in MOS structures are discussed. The trapped charges and generated interface states caused by hot carrier effect lead to curve distortion of C-V characteristics,flatband voltage shift and SiO2 leakage current shift with time under constant voltage. The mechanisms of these shifts are dealt with. The tn physical models of shifts are put forward. So the phenomena observed in experiments are well explained.

关 键 词：载流子注入 集成电路 结构 MOS 

分 类 号：TN432.03[电子电信—微电子学与固体电子学]