国外量子阱红外焦平面探测器的发展概况  

Development Status of Quantum Well Infrared Photodetectors in the Euramerican Countries

作　　者：史衍丽[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2005年第4期274-278,共5页Infrared Technology

摘　　要：以GaAs/AlGaAs为代表的Ⅲ-Ⅴ量子阱红外焦平面探测器因其成熟的材料生长和器件工艺技术,一直是与传统的HgCdTe红外探测器并驾齐驱的红外探测器。近十年来随着对器件结构、机理及器件工艺的不断改进,大面阵Ⅲ-Ⅴ量子阱红外焦平面器件发展显著。本文介绍了量子阱红外焦平面探测器的优越性及存在的问题,当前欧美国家量子阱红外焦平面探测器的最新研究发展、产品现状及应用前景。Thanks to the mature technologies of materials growth and devices processing, GaAs/AlGaAs Quantum Well Infrared Photodetectors has been a vital infrared detectors comparing with the conventional Hg1-xCdxTe Infrared detectors. During the recent ten years distinct progresses have been obtained for the GaAs/AlGaAs quantum well Infrared photodetectors with the consistent effort to improve the detecting mechanism, device structure and processing. The advantages and disadvantages were analyzed in this paper, as well as the latest development status, tendency, products and applications in the Euromerican countries were reported.

关 键 词：红外焦平面探测器 量子阱 发展概况 红外焦平面器件 红外探测器 国外 HGCDTE 工艺技术 材料生长 GAAS 器件结构 器件工艺 研究发展 欧美国家 产品现状 面阵 

分 类 号：TN215[电子电信—物理电子学] O471.1[理学—半导体物理]