n-GaN肖特基势垒光敏器件的电子辐照效应  

Effects of Electron Irradiation on n-GaN Schottky Barrier Photosensitive Devices

作　　者：刘畅[1] 王鸥[1] 袁菁[1] 钟志亲 龚敏[1] 

机构地区：[1]四川大学物理科学与技术学院微电子学系,成都610064

出　　处：《光散射学报》2005年第2期159-163,共5页The Journal of Light Scattering

摘　　要：本文主要研究了n型GaN肖特基紫外光敏器件(包括GaN肖特基势垒紫外探测器,GaN肖特基二极管)的电子辐照效应和失效机理,以及辐照后二极管对不同波长光的光敏特性的变化。从实验中观测到,随着辐照注量的不断增加,GaN光敏器件的击穿电压明显减小,反向漏电流逐渐增大。证实了辐照后Au/GaN间产生的界面态是引起GaN肖特基势垒光敏器件辐照失效的原因。另外,在研究辐照效应对GaN肖特基二管光敏特性的影响时观测到,经过一定剂量的辐照后,GaN肖特基二管能探测到380nm的紫外光和可见光,而在辐照以前,它是探测不到的。这说明辐照效应将导致肖特基势垒光敏器件对较长波长的吸收,使得UV探测器中可见光成分的背景噪声增加。The mechanism of the electron irradiation-induced failure of n-type GaN Schottky barrier devices has been investigated using current-voltage (I-V) measurement . The results indicated that even a light-dose irradiation would obviously reduce the reverse breakdown volt- age but slightly enlarge the reverse leakage current. This mechanism of the failure was due to the damage of Au/GaN Schottky interface. In addition, the effects of irradiation on the UV and visible lights sensitive characteristics of GaN Schottcky barrier devices also have been inves- tigated. After irradiation, the light of UV (380nm) and even visible light could be detected. The energies of these photons are smaller than the bandgap (3. 4eV) of GaN and the lights should not be detected before irradiation. Electron-irradiation-induced levels led to the in- creasing of visible light background yawp in Schottcky barrier UV detector.

关 键 词：GaN光敏器件 电子辐照 紫外探测器 肖特基二极管 辐照失效 金属/半导体界面 

分 类 号：O472.3[理学—半导体物理]