真空退火对溅射淀积ZnO:Ga透明导电膜性能的影响  

Influence of Vacuum Annealing on Properties of ZnO:Ga Films Prepared by r.f. Magnetron Sputtering

作　　者：马瑾[1] 余旭浒[1] 计峰[1] 王玉恒[1] 张锡健[1] 程传福[2] 马洪磊[1] 

机构地区：[1]山东大学物理与微电子学院,山东济南250100 [2]山东师范大学物理系,山东济南250014

出　　处：《稀有金属材料与工程》2005年第7期1166-1168,共3页Rare Metal Materials and Engineering

基　　金：教育部科学技术研究重点项目(02165);博士点基金资助项目(20020422056)

摘　　要：采用射频磁控溅射法在玻璃衬底上低温制备出了镓掺杂氧化锌(ZnO:Ga)透明导电膜,研究了真空退火对薄膜结构、电学和光学特性的影响。结果表明:真空退火后,薄膜结构得到明显改善,电阻率由退火前的1.13×10-3?·cm下降到5.4×10-4?·cm,在可见光区的平均透过率也由未退火前的83%提高到退火后的90%以上。The transparent conducting gallium-doped Zinc Oxide (ZnO:Ga) thin films were prepared on glass substrates by r.f. magnetron sputtering technique at the low temperature. The effects of vacuum annealing on the structural, electrical and optical properties of ZnO:Ga films were investigated. The results show that the annealing treatments lead to distinctness changes in the structural, electrical and optical characteristics of ZnO:Ga thin films. The electrical resistivities and the average transmittances of ZnO:Ga films were improved by vacuum annealing. The average transmittance increases from 83% to more than 90% and the electrical resistivity decreases from 1.13 x 10(-3) Omega(.)cm to 5.4 x 10(-4) Omega(.)cm after annealing treatment.

关 键 词：磁控溅射 ZNO:GA 真空退火 

分 类 号：TB43[一般工业技术]