界面电偶极子对GaN/AlGaN/GaN光电探测器紫外/太阳光选择比的影响  

Influence of interface dipoles on the UV/Solar rejection ratios of GaN/AlGaN/GaN photodetectors

作　　者：张春福[1] 郝跃[1] 游海龙[1] 张金凤[1] 周小伟[1] 

机构地区：[1]西安电子科技大学微电子学研究所宽禁带材料与器件教育部重点实验室,西安710071

出　　处：《物理学报》2005年第8期3810-3814,共5页Acta Physica Sinica

基　　金：国家重点基础研究发展规划(批准号:51327020301)资助的课题~~

摘　　要：在GaN/AlGaN/GaN倒置异质结光电二极管(IHP)中,存在于AlGaN/GaN异质结界面处强烈的极化效应对器件的紫外/太阳光(UV/Solar)选择比产生了重要的影响.将极化效应总的影响分为两部分:电偶极子和极化项,在建立的GaN/AlGaN/GaN结构IHP模型的基础上,对电偶极子对器件UV/Solar选择比的影响进行了分析.分析结果表明,只有在考虑电偶极子的影响时,光电探测器的UV/Solar选择比在103数量级左右,与实验结果符合较好.因此,在IHP中必须考虑电偶极子的影响.In the inverted heterostructure photodiodes (IHPs), the strong polarization effect at the interface of the AlGaN/GaN heterostructure influences UV/Solar rejection ratios of this type of structure. In this paper, the total effect of polarization is divided into two parts: the polarization and dipole terms. Based on the model of GaN/AIGaN/GaN IHPs, the influence of dipoles on the UV/Solar rejection ratios is analyzed. The results show that when dipoles are considered, UV/Solar rejection ratios of photodetectors are about three orders of magnitude, which agree with the experiment of Tarsa. The influence of dipoles should be considered in the IHPs.

关 键 词：ALGAN/GAN 电偶极子 光电探测器 选择比 太阳光 紫外 极化效应 光电二极管 异质结界面 分析结果 数量级 器件 UV 

分 类 号：TN362[电子电信—物理电子学]