真空压力浸渗法制备SiCp／Al的研究  

Fabrication of Al-SiCp Composites By Vacuum-high Pressure Infiltration Method

作　　者：俞剑[1] 喻学斌[1] 张国定[1] 

机构地区：[1]上海交通大学

出　　处：《材料科学与工艺》1995年第4期6-10,共5页Materials Science and Technology

摘　　要：用真空压力浸渗法制备了ＳｉＣｐ／Ａｌ复合材料。研究表明，这种工艺的优点是制备的Ｓｉｐ／Ａｌ复合材料颗粒含量高，热膨胀系数低且可调整。如能提供精密模具，该工艺对于开发ＳｉＣｐ／Ａｌ复合材料作为一种新兴电子封装材料是极具竞争力的。研究还发现，将真空压力浸渗法制备的颗粒含量高的复合材料通过重熔稀释可制成颗粒含量适中、气孔率低、无氧化夹杂和界面反应的最终复合材料。与复合铸造法制备的同样材料相比，这种材料具有低的气孔率和较高的拉伸强度。The fabrication of Al-SiCp composites by vaccum-high pressure infiltration method has been conducted.It was found that by suing this method, a low and adjustable CTE can be obtained. If precision molds are provided, this technique would appear to be a very competitive process for developing Al-SiCp composites as one kind of new electronic packaging materials. It is also found that the high volume fraction Al-SiCp composites can then be diluted into composites with moderate volume fraction of reinforcement. The resulting composites have low porosity, no oxide inclusion and interfacial reaction.Compared with those produced by compocasting method,the Al-SiCp composites made by our method have lower porosity and higher tensile strength.

关 键 词：碳化硅 铝 电子封装材料 复合材料 

分 类 号：TB333[一般工业技术—材料科学与工程]