离子注入MOS结构少子产生寿命的确定  

Determination of Minority Generation Lifetime ofIon Implanted MOS Structure

作　　者：吴春瑜 张久惠 

出　　处：《辽宁大学学报（自然科学版）》1995年第1期51-54,共4页Journal of Liaoning University：Natural Sciences Edition

摘　　要：本文分析了非均匀掺杂衬底ＭＯＳ结构的电流和电容对线性扫描电压的瞬态响应，采用较精确的产生区模型，提出了瞬态电流和瞬态电容联合技术测量非均匀掺杂衬底ＭＯＳ结构电容少子产生寿命的方法，本方法无需计算图形积分和衬底的杂质分布，因而简单实用。Transient response of current and capacitence of non-uniformlydoped MOS structure to a linear sweep voltage is analysed. A method of measuringminority generation lifetime of non-uniformly doped MOS capacitors has beenobtained by transient current and transient capacitence combined technology usingmore accurate model of generation region. This method is simple and can be usedwithout calculating the figure integral and knowing the doped profile of MOSsubstrate.

关 键 词：非均匀掺杂衬底 少子产生寿命 MOS结构 离子注入 

分 类 号：TN386.1[电子电信—物理电子学]