硅双极型高速工艺和与其相容的硅PIN探测器  

Si bipolar high-speed process and its compatible Si-PIN detector

作　　者：余宽豪[1] 刘毓成[1] 陈学良[1] 

机构地区：[1]中国科学院上海冶金研究所微电子学分部

出　　处：《半导体光电》1995年第3期265-268,共4页Semiconductor Optoelectronics

摘　　要：文章描述硅双极高速工艺，和一种能与双极工艺相容的硅ＰＩＮ探测器的结构及设计，从而提出一套易于实现两者集成的相容工艺。研制的单片集成光接收机，其中硅ＰＩＮ探测器的光电响应为０．４３Ａ／Ｗ，整机的响应度为４．４×１０３Ｖ／Ｗ，工作频率２５０ＭＨｚ。This paper introduces Si bipolar high-speed process and compatible structure and design with Si-PIN detector.A compatible process for integrating the bipolar transistor with Si-PIN detector is presented. Monolithic sillicon receiver has been developed. Sensitivities of Si-PIN detector and receiver are measured to be 0.43A/W and 4. 4×103V/W , respectively ,operating at 250MHz.

关 键 词：光电子集成电路 双极晶体管 探测器 硅 

分 类 号：TN322.805[电子电信—物理电子学] TN304.12