CdS／CuInSe_2异质结内建电压测试理论和方法的研究  

Study of Measurement Theory and Method of CdS/CuInSe_2 Heterojunction Built-in Potential

作　　者：杨文库[1] 杨宇欣[1] 邓文荣[1] 

机构地区：[1]长春光学精密机械学院电子工程系,中国科学院长春光学精密机械研究所

出　　处：《Journal of Semiconductors》1995年第9期669-672,共4页半导体学报（英文版）

摘　　要：本文提出了精确测量内建电压Ｖ_Ｄ的Ｗ（结宽）－Ｎ（Ｎｅｆｆ为有效空间电荷密度）新方法．文中严格证明了由Ｗ－Ｎ曲线的斜率可计算异质结的ＶＤ．在零偏压下测量了ＣｄＳ／ＣｕＩｎＳｅ２异质结的ＶＤ，样品ＣＩＳ－１的ＶＤ为０．４３７Ｖ，样品ＣＩＳ－２的ＶＤ为０．２９３Ｖ．我们的测量结果表明，光照不改变ＶＤ，但使异质结变窄．内建电压是异质结的固有参量．利用Ｗ－Ｎ方法可以详细研究偏压对异质结电特性和其它参量的影响．Abstract A new method for determinig W (junctuon width) versus (N) (Nis effective space charge density) is proposed for precise measurement of built-in potential VD. It is strictly proved in this paper that heterojunction buil-in potential VD can be calculated from the slope of W-(N) curve At zero bias,the measured VD of a CdS/CuInSe2 heterojunction was 0.437V for sample CIS-1, 0.293V for sample CIS-2. Our measurement results demonstrate that illumination does not vary V_D but makes the heterojunction narrower,the built-in potential is an inherent parameter for heterojunction. Moreover, using W-(N)method,the bias effect on the electric characteristic of heterojunction and other parameters can be researched in detail.

关 键 词：CDS CUINSE2 异质结 电压 测试 能带结构 半导体 

分 类 号：O471.5[理学—半导体物理]