Ge_xSi_（1－x）／Si异质结大截面脊形BOA型光开关的模型分析及设计  

Modeling Analysis and Structure Design of Ge_xSi_(1-x)/Si Heterojunction Rib BOA Switch with Large Cross-Section

作　　者：赵策洲[1] 刘恩科[1] 高勇[1] 

机构地区：[1]西安交通大学电子工程系

出　　处：《Journal of Semiconductors》1995年第9期663-668,共6页半导体学报（英文版）

摘　　要：本文提出了一种简便可行的ＧｅｘＳｉ（１－ｘ）／Ｓｉ异质结无间距定向耦合光开关（ＢＯＡ型──—ＢｉｆｕｒｃａｔｉｏｎＯｐｔｉｑｕｅＡｃｔｉｖｅ）模型分析方法．该方法采用等离子体色散效应分析了这种光开关的电学调制机理：采用异质结超注入原理分析了开关的电学性质；并根据大截面单模脊形波导理论和上述分析，设计了利用双模干涉机制工作的Ｇｅ（０．１）Ｓｉ（０．９）／Ｓｉ异质结ＢＯＡ开关的结构参数和电学参数．Abstract A simple and practical modeling of the GexSi(1-x)/Si heterojunction zero-gap directional coupler switch (BOA type──Bifurcation Optical Active) is carried out. The electro-optic modulating mechanism of the zero-gap directional coupler switch is investigated by plasma dispersion effect. The electrical character of the switch is analysed by the heterojunction ultra high in jection principle. On the basis of the analyses and theory of the single-mode optical waveguide with large cross-section,structure parameters and electrical parameters of the Ge0.1Si0.9/Si heterojunction BOA switch with double-mode interference mechanism are designed.

关 键 词：光开关 模型分析 设计 硅化锗 硅 异质结 

分 类 号：TM564[电气工程—电器]