直拉硅单晶中热施主的快速热退除  

Annealing Thermal Donors in CZ Si Crystal by Rapid Thermal Annealing

作　　者：栾洪发 张果虎[1] 李兵[1] 陈学清[1] 秦福[1] 钱佩信[1] 

机构地区：[1]清华大学微电子学研究所,北京有色金属研究总院

出　　处：《Journal of Semiconductors》1995年第10期789-793,共5页半导体学报（英文版）

摘　　要：本文研究了快速热处理退除热施主态的丁艺，及４５０℃、１小时热处理施主的再生问题．结果表明快速热处理是一种有效的退除热施主的方法，其效果与常规６５０℃、２小时处理相同．４５０℃、１小时处理没有热施主再生现象发生．Abstract The technology of annealing the thermal donors by rapid thermal annealing and the regrowth of the thermal donors by the heat treatment at 450℃ for 1 hour are studied.The results show that the rapid thermal annealing is an efficient technology to anneal out the thermal donors. its efficiency is the same as the common heat treatment at 650℃ for 2 hour.The regrowth of thermal donors by heat treatment at 450C for 1 hour is not happened.

关 键 词：单晶拉制 硅 热施主 热处理 

分 类 号：TN304.12[电子电信—物理电子学]