纳米硅薄膜的电致发光和光致发光  

Electroluminescense and Photoluminescense of nc-Si: H Films

作　　者：余明斌[1] 李雪梅[1] 何宇亮 徐士杰[1] 刘剑[1] 罗晋生 魏希文 郑厚植[1] 戌霭伦 

机构地区：[1]北京航空航天大学非晶态物理研究室,中国科学院半导体研究所半导体超晶格国家重点实验室,西安交通大学电子工程系,大连理工大学物理系

出　　处：《Journal of Semiconductors》1995年第12期913-916,共4页半导体学报（英文版）

基　　金：国家基金;中科院半导体超晶格与微结构国家重点实验室申请课题

摘　　要：对用ＰＥＣＶＤ方法控制生长条件制备的纳米硅薄膜材料的发光性质进行了初步研究．在膜的纵向加直流偏压，暗场环境下可清楚地看到材料的电致发光现象．在同一套测量系统中分别测量了纳米硅材料的电致发光光谱和光致发光光谱，并用Ｌａｍｂｄａ９紫外／可见／近红外分光光度计测量了样品的透射谱。Abstract The luminescense properties of nc-Si: H films grown by PECVD method through controlling deposition conditions have been preliminarily studied. DC voltage was longtitudlnally applied on the films, and the electronluminescense of the materials can be clearly found in dark surrondings. The spectra of EL and PL of nc-Si:H films were measured in the same instrument. Using Lambda 9 UV/VIS/NIR spectrophotomer, we have measured the transmission spectra of nc-Si:H films, and obtained the Tauc curves and the optical gap Eoptg.

关 键 词：纳米硅薄膜 硅薄膜 电致发光 光致发光 

分 类 号：TN304.12[电子电信—物理电子学]