硅异质结和赝异质结双极器件研究进展  

Research and Progress of Silicon Heterojunction and Pseudo-Heterojunctgion Bipolar Devices

作　　者：郑茳[1] 许居衍[1] 

机构地区：[1]东南大学-华晶无锡微电子应用研究所

出　　处：《电子学报》1995年第10期144-147,共4页Acta Electronica Sinica

基　　金：国家自然科学基金

摘　　要：本文作者结合自己的工作，综述了硅异质结和赝异质结双极器件的研究进展，指出ＧｅＳｉＨＢＴ将成为双极结构的主流技术，硅赝异质结器件也将在低温应用等方面显示出优势。The research and progress of silicon heterojunction and pseudo-heterojunction bipolar devices are summarized on the basis of our previous work. It is indicated that GeSi HBT will be the dominant technique of silicon bipolar stuctures,and silicon pseudo-heterojunction bipolartransistor has the superiority for low temperature application.

关 键 词：硅 异质结 赝异质结 双极器件 双极晶体管 

分 类 号：TN322.8[电子电信—物理电子学]